DRIE Etcher
Overview
Our DRIE(Deep Reactive Ion Etching) Etcher conducts fine cycling & non-cycling etching process of silicon substrate by utilizing high-density plasma. It is applicable for various etching process such as deep trench, isotropic profile with its high-speed etching capability and high aspect ratio.
This machine is cluster type(up to chambers) and suitable for mass production line that fabricate 4"~8" wafer.
Industry Opportunity
- • Increase in DRIE-applicable fabricating & packaging processes in semiconductor industry that were limited to MEMS device
- • DRIE-applicable processes for 3D TSV, 2.5D interposer, PMIC, CIS and other analog devices arose due to 'Micro to Macro' trend in semiconductor industry
- • Expansion of applicable field beyond silicon substrate such as polyimide, Quartz, SiC and so on
Core Competency
- • Superior process capability : cycling & non-cycling, high-speed etching, process uniformity, and high aspect ratio with profile control, smooth surface, egde profile control, edge shadow ring
- • Wide process window : Micro to Macro, MEMS to Semiconductor
- • Providing customized DRIE etcher that is optimized for customer's product and process features by utilizing our own demo laboratory
Application
- • Through silicon via
- • Deep trench isolation
- • Blanket etch
- • Tapered etch
- • High aspect ratio
- • Smooth sidewall
- • In-situ process
- • 3D IC
- • MEMS
- • Power device